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MTM12N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP12N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP12N06

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.180OHM

Motorola

Motorola, Inc

MTP12N06EZL

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.180OHM

Motorola

Motorola, Inc

RFD12N06

60VN-ChannelMOSFET

Features ?UltraLowOn-Resistance -RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?)

RFD12N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFD12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFD12N06RLESM

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFP12N06

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFP12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFP12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFP12N06RLE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SDP12N06

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SG12N06DP

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司

SG12N06DP

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

SG12N06DT

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

SG12N06DT

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MTD12N06EZL

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

  • 制造商：

    ON Semiconductor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON/安森美
24+
5000
只做原廠渠道 可追溯貨源
 詢價(jià)
onsemi(安森美)
23+
-
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ON
24+
30000
詢價(jià)
ON
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
ON
23+
TO-252
6893
詢價(jià)
ONSEMICONDU
16+
原裝進(jìn)口原廠原包接受訂貨
350
原裝現(xiàn)貨假一罰十
 詢價(jià)
ON
2023+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
ON
21+
35200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
ON
24+
T0-252
6430
原裝現(xiàn)貨/歡迎來(lái)電咨詢
 詢價(jià)
ON/安森美
23+
TO-252
9800
全新原裝現(xiàn)貨,假一賠十
 詢價(jià)
更多MTD12N06EZL供應(yīng)商 更新時(shí)間2024-11-17 16:36:00

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