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RJP30H1

SiliconNChannelIGBTHighspeedpowerswitching

*Trenchgateandthinwafertechnology(G6H-IIseries) *Highspeedswitching:tr=80nstyp.,tf=150nstyp. *Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. *Lowleakcurrent:ICES=1?Amax.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP30H1

SiliconNChannelIGBTHighspeedpowerswitching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1?Amax. ●IsolatedpackageTO-220FL

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP30H1DPD

SiliconNChannelIGBTHighspeedpowerswitching

*Trenchgateandthinwafertechnology(G6H-IIseries) *Highspeedswitching:tr=80nstyp.,tf=150nstyp. *Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. *Lowleakcurrent:ICES=1?Amax.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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