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MRF9100R3中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

MRF9100R3
廠商型號

MRF9100R3

功能描述

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

文件大小

395.47 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-21 20:00:00

MRF9100R3規(guī)格書詳情

The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment.

? On–Die Integrated Input Match

? Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts

Output Power, P1dB — 110 Watts (Typ)

Power Gain @ P1dB — 16.5 dB (Typ)

Efficiency @ P1dB — 53 (Typ)

? Integrated ESD Protection

? Designed for Maximum Gain and Insertion Phase Flatness

? Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts (CW) Output Power

? Excellent Thermal Stability

? Characterized with Series Equivalent Large–Signal Impedance Parameters

? Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

產(chǎn)品屬性

  • 型號:

    MRF9100R3

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

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