MRF7S35120HSR3分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

3100-3500 MHz, 120 W PEAK, 32 V PULSED LATERAL N-CHANNEL RF POWER MOSFET

Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

? Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20

Power Gain — 12 dB

Drain Efficiency — 40

? Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01 Probability on CCDF

Power Gain — 13 dB

Drain Efficiency — 16

RCE — -33 dB (EVM — 2.2 rms)

? Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak Power

? Capable of Handling 3 dB Overdrive @ 32 Vdc

Features

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? Internally Matched for Ease of Use

? Qualified Up to a Maximum of 32 VDD Operation

? Integrated ESD Protection

? Greater Negative Gate-Source Voltage Range for Improved Class C Operation

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.