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MJF2955

COMPLEMENTARYSILICONPOWERTRANSISTORS

MJF3055(NPN) MJF2955(PNP) COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS,30WATTS Specificallydesignedforgeneralpurposeamplifierandswitchingapplications. Features ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopular

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF2955

COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS30WATTS

ComplementarySiliconPowerTransistors ...specificallydesignedforgeneralpurposeamplifierandswitchingapplications. ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopularMJE3055TandMJE2955T ?Collector–EmitterSustainingVoltage—VCEO(sus)90Volts

Motorola

Motorola, Inc

MJF2955

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF2955G

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT2955E

TMOSMEDIUMPOWERFET1.2AMP60VOLTS

Motorola

Motorola, Inc

MMFT2955E

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MSU2955

8-BitMicro-controller

8-BitMicro-controllerwith16KBflashembedded

MOSELMOSEL VETELIC INC.

茂矽臺灣茂矽電子股份有限公司

MTD2955E

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM

TMOSE-FET?PowerFieldEffectTransistorDPAKforSurfaceMountP–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

Motorola

Motorola, Inc

MTD2955E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD2955E

PowerFieldEffect

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistorDPAKForSurfaceMountP–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

Motorola

Motorola, Inc

MTD2955V

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTD2955V

PowerMOSFET12A,60VP-ChannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD2955VG

PowerMOSFET12A,60VP-ChannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955VG

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTP2955

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

Motorola

Motorola, Inc

MTP2955D

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

Motorola

Motorola, Inc

MTP2955E

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

Motorola

Motorola, Inc

MTP2955E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    MJE2955TTU_Q

  • 功能描述：

    兩極晶體管 - BJT

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
華晰
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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華晰
2022+
TO-220
57550
詢價
ST/意法
2022+
TO-220AB
8000
只做原裝支持實單,有單必成。
 詢價
ON/安森美
2122+
NA
60000
全新原裝正品現(xiàn)貨,假一賠十
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ST/意法
TO220
275000
一級代理原裝正品,價格優(yōu)勢,長期供應(yīng)!
 詢價
ST/意法
22+
TO-220AB
45500
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
ST/意法
2023+
TO-220AB
50000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
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ST/意法
18+
TO-220
449
就找我吧!--邀您體驗愉快問購元件!
 詢價
ST/意法
23+
TO-220
6000
只做原裝現(xiàn)貨假一罰十QQ3007670717
 詢價
ST
23+
TO-220
16900
正規(guī)渠道,只有原裝!
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更多MJE2955TTU_Q供應(yīng)商 更新時間2024-11-17 11:00:00

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