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MDF12N50TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDF12N50TH

N-Channel MOSFET 500V, 11.5 A, 0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50B

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDP12N50BTH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50F

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDP12N50FTH

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDP12N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDP12N50TH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MSAER12N50A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features ?Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFR12N50A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features ?Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SIHA12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Computing

VishayVishay Siliconix

威世科技威世科技半導體

SIHA12N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHA12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Comput

VishayVishay Siliconix

威世科技威世科技半導體

SIHB12N50C

PowerMOSFET

FEATURES ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?GateChargeImproved ?Trr/QrrImproved ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導體

SIHB12N50C

PowerMOSFETs

FEATURES ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?GateChargeImproved ?Trr/QrrImproved ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導體

SIHB12N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHB12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Comput

VishayVishay Siliconix

威世科技威世科技半導體

SIHB12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Computing

VishayVishay Siliconix

威世科技威世科技半導體

供應商型號品牌批號封裝庫存備注價格
MAGNACHIP
23+
TO-220F
65400
詢價
MAGNACHIP/美格納
24+
TO-220F
472
只做原廠渠道 可追溯貨源
詢價
MAGNACHIP/美格納
22+
TO-220F
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
Magnachip
11+
TO220F
10000
熱賣原裝現(xiàn)貨
詢價
MAGNACHIP
15CN
TO-220F
10626
原廠直銷
詢價
MAGNACHIP
17+
TO-220F
6200
100%原裝正品現(xiàn)貨
詢價
MAGNACHIP
1718+
TO-220F
9300
只做原裝進口,假一罰十
詢價
Magnachip
17+
TO-220F
9888
只做原裝,現(xiàn)貨庫存
詢價
TI
23+
SOP8
590
全新原裝假一賠十
詢價
MAGNACH
18+
TO-220F
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
更多MDF12N50TH供應商 更新時間2024-10-26 16:45:00