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MCR703

SiliconControlledRectifiers

SiliconControlledRectifiersReverseBlockingTriodeThyristors ...PNPNdevicesdesignedforhighvolume,lowcostconsumerapplicationssuchastemperature,lightandspeedcontrol;processandremotecontrol;andwarningsystemswherereliabilityofoperationiscritical. ?SmallSize ?P

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MCR703A

SensitiveGateSiliconControlledRectifiersReverseBlockingThyristors

ReverseBlockingThyristors SCRs4.0AMPERESRMS100?600VOLTS PNPNdevicesdesignedforhighvolume,lowcostconsumerapplicationssuchastemperature,lightandspeedcontrol;processandremotecontrol;andwarningsystemswherereliabilityofoperationiscritical. Feat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MCR703A

SiliconControlledRectifiers

SiliconControlledRectifiersReverseBlockingTriodeThyristors ...PNPNdevicesdesignedforhighvolume,lowcostconsumerapplicationssuchastemperature,lightandspeedcontrol;processandremotecontrol;andwarningsystemswherereliabilityofoperationiscritical. ?SmallSize ?P

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MCR703A

SURFACEMOUNTSILICONCONTROLLEDRECTIFIER4AMP,100THRU600VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORMCR703A,MCR704A,MCR706A,andMCR708AareepoxymoldedSCRsdesignedforsensingcircuitandcontrolsystemapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MCR703A

SiliconControlledRectifiers

KERSEMI

Kersemi Electronic Co., Ltd.

MCR703A

SURFACEMOUNTSILICONCONTROLLEDRECTIFIERS

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MCR703A

SiliconControlledRectifiers

SiliconControlledRectifiersReverseBlockingTriodeThyristors ...PNPNdevicesdesignedforhighvolume,lowcostconsumerapplicationssuchastemperature,lightandspeedcontrol;processandremotecontrol;andwarningsystemswherereliabilityofoperationiscritical. ?SmallSize ?P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MCR703A

SiliconPlanarPNPNThyristor(4ASCR)

DESCRIPTION ThyristorinaTO-252Package. FEATURES Theconsumptionlevelprovidereliableapplications, suchastemperature,lighting,speed,etc. APPLICATIONS AppliedtohighVoltagecontrolcircuit.

FS

First Silicon Co., Ltd

MJE703

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage—:VCEO(SUS)=-80V ?DCCurrentGain—:hFE=750(Min)@IC=-2A =100(Min)@IC=-4A ?ComplementtoTypeMJE803 APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingap

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE703

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE703

NPN(HIGHDCCURRENTGAIN)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

MJE703

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE703

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBase-EmitterResistors ?HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC ?ComplementtoMJE800/801/802/803

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE703

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE703

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE703

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE703G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE703G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE703T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJE703T

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector–EmitterBreakdownVoltage—:V(BR)CEO=-80V ?DCCurrentGain—:hFE=750(Min)@IC=-2A ?ComplementtoTypeMJE803T APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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更多MC703G供應(yīng)商 更新時(shí)間2024-12-25 13:56:00