首頁(yè) >MBRB30H60CTG>規(guī)格書列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SCHOTTKYBARRIERRECTIFIERS Feaures Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std(HalogenFree) Lowstoredchargemajoritycarrierconduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE | ||
PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
DualCommon-CathodeSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageSchottkyRectifiers DualCommonCathodeHighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES ?Powerpack ?Guardringforovervoltageprotection ?Lowpowerloss,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapabil | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SWITCHMODE??PowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SWITCHMODEPowerRectifier60V,30A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SWITCHMODEPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SWITCHMODEPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
TrenchgateField-StopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
Automotive-gradetrenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?Logiclevelgatedrive ?Highspeedswitchingseries ?Minimizedtailcurrent ?VCE(sat)=1.7V(typ.)@IC=30A ?LowVFsoftrecoveryco-packageddiode ?Tightparametersdistribution ?Saferparalleling ?L | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
Automotive-gradetrenchgatefield-stop,600V,30A,high-speedHBseriesIGBTinaTO?LLpackage Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?Logiclevelgatedrive ?High-speedswitchingseries ?Minimizedtailcurrent ?VCE(sat)=1.6V(typ.)@IC=30A ?LowVFsoft-recoveryco-packageddiode ?Tightparameterdistribution ?Saferparalleling ?Lo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
22+23+ |
TO-263 |
27227 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ON |
22+ |
TO-262 |
28600 |
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ON/安森美 |
2022 |
TO-262 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
ON/安森美 |
2048+ |
TO-262 |
9851 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
ON(安森美) |
22+ |
NA |
8000 |
原廠原裝現(xiàn)貨 |
詢價(jià) | ||
ON(安森美) |
23+ |
標(biāo)準(zhǔn)封裝 |
5000 |
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品 |
詢價(jià) | ||
ON |
TO-262 |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ON(安森美) |
2021/2022+ |
標(biāo)準(zhǔn)封裝 |
8000 |
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品 |
詢價(jià) | ||
ON(安森美) |
23+ |
標(biāo)準(zhǔn)封裝 |
8000 |
原裝，可配單 |
詢價(jià) |
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