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NCP5322ADWG

Two??haseBuckControllerwithIntegratedGateDriversand5??itDAC

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTE5322

NTE5326/NTE5327/NTE5328SiliconBridgeRectifier,Single-Phase,25Amp

Features: ?SuperiorThermalDesign ?SurgeOverloadRating:400A(Peak) ?HoleThroughfor#8Screw ?SilverplatedCopperTerminals

NTE

NTE Electronics

NTE5322W

SiliconBridgeRectifier,Single-Phase,25Amp

Features: ●SuperiorThermalDesign ●SurgeOverloadRating:400A(Peak) ●HoleThroughfor#8Screw ●SilverplatedCopperLeads

NTE

NTE Electronics

NX5322

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS ?S

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5322

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

CEL

California Eastern Labs

NX5322

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=5.0mW ?Lowthresholdcurrentlth=7mA ?Differential

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX5322EH

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=5.0mW ?Lowthresholdcurrentlth=7mA ?Differential

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX5322EH

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS ?S

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5322EH-AZ

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

CEL

California Eastern Labs

NX5322EK

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS ?S

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MAX5322EAI-T

  • 功能描述：

    數(shù)模轉(zhuǎn)換器- DAC

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 轉(zhuǎn)換器數(shù)量：

    1 DAC

  • 輸出端數(shù)量：

    1

  • 轉(zhuǎn)換速率：

    2 MSPs

  • 分辨率：

    16 bit

  • 接口類型：

    QSPI, SPI, Serial(3-Wire, Microwire)

  • 穩(wěn)定時(shí)間：

    1 us

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOIC-14

  • 封裝：

    Tube

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89630
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2016+
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6528
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更多MAX5322EAI-T供應(yīng)商 更新時(shí)間2025-5-27 13:30:00

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