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NTE5322W

Silicon Bridge Rectifier, Single-Phase, 25 Amp

Features: ●SuperiorThermalDesign ●SurgeOverloadRating:400A(Peak) ●HoleThroughfor#8Screw ●SilverplatedCopperLeads

NTE

NTE Electronics

NX5322

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS ?S

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5322

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

CEL

California Eastern Labs

NX5322

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=5.0mW ?Lowthresholdcurrentlth=7mA ?Differential

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NX5322EH

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=5.0mW ?Lowthresholdcurrentlth=7mA ?Differential

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NX5322EH

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS ?S

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5322EH-AZ

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

CEL

California Eastern Labs

NX5322EK

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=5.0mW ?Lowthresholdcurrentlth=7mA ?Differential

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NX5322EK

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS ?S

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5322EK-AZ

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

CEL

California Eastern Labs

詳細參數(shù)

  • 型號：

    NTE5322W

  • 制造商：

    NTE Electronics

  • 功能描述：

    BRIDGE RECTIFIER 1 PH 25A 200V GBPC

  • 功能描述：

    R-SI-BRIDGE 200V-25A

  • 功能描述：

    BRIDGE RECTIFIER, 1 PH, 25A, 200V, GBPC; No. of

  • Phases：

    Single; Repetitive Reverse Voltage Vrrm

  • Max：

    200V; Forward Current

  • If(AV)：

    25A; Forward Voltage VF

  • Max：

    1.2V; Bridge Rectifier Case

  • Style：

    GBPC; No. of

  • Pins：

    4; Current,

  • Ifsm：

    300A

  • 功能描述：

    Diode Rectifier Bridge Single 200V 25A 4-Pin

供應商型號品牌批號封裝庫存備注價格
NTE
23+
39400
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
24+
N/A
72000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
新
91
全新原裝 貨期兩周
 詢價
2022+
87
全新原裝 貨期兩周
 詢價
N/A
6000
面議
19
MODULE
 詢價
原廠
2023+
模塊
600
專營模塊,繼電器,公司原裝現(xiàn)貨
 詢價
CRYDOM
23+
模塊
5000
原裝正品,假一罰十
 詢價
CRYDOM
23+
原廠原裝
1002
全新原裝現(xiàn)貨
 詢價
CRYDOM
18+
MODULE
2
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多NTE5322W供應商 更新時間2025-2-6 11:10:00

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