DESCRIPTION

M/A-COM’s, MA4AGSW1A is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST), absorptive PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM’s patented hetero-junction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3dB reduction in insertion loss can be realized at 50GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The PIN diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction as well as the anode air-bridges . Off chip bias circuitry will be required.

FEATURES

? Ultra Broad Bandwidth: 50 MHz to 50 GHz

? Functional Bandwidth : 50 MHz to 70 GHz

? 0.5 dB Insertion Loss at 50GHz

? 46 dB Isolation at 50 GHz

? Low Current consumption.

? -10mA /1.35V for low loss state

? +10mA /1.35V for Isolation state

? Silicon Nitride Passivation

? Polymer Scratch protection

? RoHS Compliant