DESCRIPTION

M/A-COM’s MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as a 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD eptaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit lower series resistance, lower capacitance, and faster switching speeds than Silicon based devices. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows for maximum design flexibility.

FEATURES

? Ultra Broad Bandwidth: 10 GHz to 50 GHz

? Functional Bandwidth: 100 MHz to 70 GHz

? 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz

? M/A-COM’s unique patent pending AlGaAs

hetero-junction anode technology.

? Silicon Nitride Passivation

? Polymide Scratch protection

MA4AGSW1A屬于RF/IF，射頻/中頻和 RFID > 射頻開關(guān)。Tyco Electronics制造生產(chǎn)的MA4AGSW1A射頻開關(guān)射頻開關(guān)產(chǎn)品是用于在多個可用信號路徑之間路由 RF、IF 或微波信號的器件。示例應(yīng)用包括多天線（分集）接收器中的天線選擇、多模式系統(tǒng)中發(fā)射-接收路徑的選擇，或在發(fā)射和接收信號鏈之間切換天線。