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M28F201

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120K1R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120K1TR

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120K3R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120K3TR

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120K6R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120K6TR

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120N1R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120N1TR

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120N3R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120N3TR

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120N6R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120N6TR

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120XK1R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120XK1TR

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120XK3R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120XK3TR

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120XK6R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120XK6TR

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M28F201-120XN1R

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F201FLASHMemoryproductisanonvolatilememorieswhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas256Kbytes.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovideasimplemicroprocessorin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細(xì)參數(shù)

  • 型號：

    M28F201

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

供應(yīng)商型號品牌批號封裝庫存備注價格
2015+
150
公司現(xiàn)貨庫存
 詢價
ST
2020+
PLCC
4500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ST
23+
PLCC32
16900
正規(guī)渠道,只有原裝!
 詢價
ST
PLCC32
36900
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
22+
PLCC32
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價
ST
23+
PLCC/32
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
ST
17+
PLCC-28
6200
100%原裝正品現(xiàn)貨
 詢價
ST
60
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
ST
24+
PLCC32
3000
公司存貨
 詢價
ST
23+
PLCC32
9526
詢價
更多M28F201供應(yīng)商 更新時間2025-1-10 12:02:00

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