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M28F201-120N6R中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
M28F201-120N6R規(guī)格書詳情
DESCRIPTION
The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
■ 5V ± 10 SUPPLY VOLTAGE
■ 12V PROGRAMMING VOLTAGE
■ FAST ACCESS TIME: 70ns
■ BYTE PROGRAMMING TIME: 10μs typical
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ LOW POWER CONSUMPTION
– Active Current: 15mAtypical
– Stand-by Current: 10μA typical
■ 10,000 PROGRAM/ERASE CYCLES
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ OTP COMPATIBLE PACKAGES and PINOUTS
■ ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code: F4h
產(chǎn)品屬性
- 型號：
M28F201-120N6R
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
2 Mb 256K x 8, Chip Erase FLASH MEMORY
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
ST |
23+ |
PLCC32 |
9526 |
詢價 | |||
ST/意法 |
23+ |
NA/ |
454 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ST/意法 |
23+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ST |
24+ |
PLCC32 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
原裝 |
22+23+ |
PLCC-28 |
17402 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
ST/意法 |
23+ |
DIP-32 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
ST |
PLCC-32 |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
17+ |
PLCC-28 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
ST |
24+ |
PLCC32 |
3000 |
公司存貨 |
詢價 |
