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LP6872中文資料FILTRONIC數(shù)據(jù)手冊PDF規(guī)格書

LP6872
廠商型號

LP6872

功能描述

0.5W POWER PHEMT

文件大小

38.59 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 Filtronic Compound Semiconductors
企業(yè)簡稱

FILTRONIC

中文名稱

Filtronic Compound Semiconductors官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-16 19:10:00

LP6872規(guī)格書詳情

DESCRIPTION AND APPLICATIONS

The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 720 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP6872 also features Si3N4 passivation.

Typical applications include commercial wireless infrastructure amplifiers, such as SATCOM uplink ransmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.

FEATURES

? 27 dBm Output Power at 1-dB Compression at 18 GHz

? 9.5 dB Power Gain at 18 GHz

? 55 Power-Added Efficiency

產(chǎn)品屬性

  • 型號:

    LP6872

  • 制造商:

    FILTRONIC

  • 制造商全稱:

    FILTRONIC

  • 功能描述:

    0.5W POWER PHEMT

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