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LP6836P100-2中文資料FILTRONIC數(shù)據(jù)手冊PDF規(guī)格書
LP6836P100-2規(guī)格書詳情
DESCRIPTION AND APPLICATIONS
The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 μm by 360 μm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si3N4 passivation and is available in die form, or P70 packages. Packages are color-coded by IDSS range.
FEATURES
? +24.5 dBm Typical Power at 15 GHz
? 12 dB Typical Power Gain at 15 GHz
? Low Intermodulation Distortion
? 55 Power-Added-Efficiency
? Color-coded by IDSS range
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CREE |
24+ |
LED |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
FILTRONIC |
1948+ |
SOT |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
LP6836P70-2 |
9 |
9 |
詢價 | ||||
FILTRONIC |
2023+ |
57 |
詢價 | ||||
CEI |
1535+ |
1800 |
詢價 | ||||
芯茂微 |
23+ |
SOP-8 |
6000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
E-Switch |
23+ |
65600 |
詢價 | ||||
FILTRONIC |
24+ |
57 |
詢價 | ||||
CREE |
23+ |
LED |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
CEI |
23+ |
1800 |
全新原裝，歡迎來電咨詢 |
詢價 |
