BAT64AW-13-F

Marking：K62；Package：SOT323；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ?LowForwardVoltageDrop ?FastSwitching ?Ultra-SmallSurfaceMountPackage ?PNJunctionGuardRingforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Notes3) ?QualifiedtoAEC-Q101StandardsforHig

BAT64AW-7-F

Marking：K62；Package：SOT323；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ?LowForwardVoltageDrop ?FastSwitching ?Ultra-SmallSurfaceMountPackage ?PNJunctionGuardRingforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Notes3) ?QualifiedtoAEC-Q101StandardsforHig

NCS20062DTBR2G

Marking：K62；Package：TSSOP-8；3 MHz, 125 A Low Power Operational Amplifier

TheNCS20061/2/4isafamilyofsingle,dualandquadOperational Amplifiers(OpAmps)with3MHzofGain?BandwidthProduct (GBWP)whileconsumingonly125AofQuiescentcurrentper opamp.TheNCS2006xhasInputOffsetVoltageof4mVandoperates from1.8Vto5.5Vsupplyvoltageoverawi

NCV20062DTBR2G

Marking：K62；Package：TSSOP-8；3 MHz, 125 A Low Power Operational Amplifier

TheNCS20061/2/4isafamilyofsingle,dualandquadOperational Amplifiers(OpAmps)with3MHzofGain?BandwidthProduct (GBWP)whileconsumingonly125AofQuiescentcurrentper opamp.TheNCS2006xhasInputOffsetVoltageof4mVandoperates from1.8Vto5.5Vsupplyvoltageoverawi

1.0SMB62A

Marking：K62A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

1.0SMB62CA

Marking：K62C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

TK62J60W5

Marking：K62J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=170ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.036Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS

TK62N60W5

Marking：K62N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=170ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.036Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS

TK62N60X

Marking：K62N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=3.1mA)

TK62Z60X

Marking：K62Z60X；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=3.1mA)