| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：K20A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01% | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
Marking：K20A60U；Field Effect Transistor Silicon N Channel MOS Type (DTMOS?? SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=0.165Ω(typ.) ?Highforwardtransferadmittance:?Yfs?=12S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Marking：K20A60W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Marking：K20A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.15Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS= | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
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