首頁 >JCS50N06FH-O-F-N-B>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

MCU50N06

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

ME50N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MS50N06

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MTB50N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB50N06EL

TMOSPOWERFETLOGICLEVEL50AMPERES60VOLTS

TMOSE-FETPowerFieldEffectTransistorsD2PAKforSurfaceMountLogicLevelTMOS(L2TMOS) N–ChannelEnhancement–ModeSiliconGate TheseTMOSPowerFETsaredesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.This

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB50N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB50N06V

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06V

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB50N06VL

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應(yīng)商型號品牌批號封裝庫存備注價格
SINO-MICRO
2022+
TO-220F
50000
原廠代理 終端免費提供樣品
 詢價
SINO-MICRO
2022+
TO-220F
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
JCS
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
JCS
18+
TO-252
41200
原裝正品,現(xiàn)貨特價
 詢價
JCS
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
S
23+
TO-252
6000
原裝正品，支持實單
 詢價
吉林華微
23+
DPAK
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
JCS
24+
NA/
252
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
吉林華微
23+
DPAK
25800
吉林華微全系列在售,可訂貨
 詢價
sino
23+
TO-252
10065
原裝正品,有掛有貨,假一賠十
 詢價
更多JCS50N06FH-O-F-N-B供應(yīng)商 更新時間2025-6-9 14:02:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多