首頁 >JCS4N90RA-R-B>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2.9? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWIT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
4A,900VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,900VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,900VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,900VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,900VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,900VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,900VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
900VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
吉林華微 |
TO-251 |
940 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | |||
吉林華微 |
2447 |
TO-251 |
105000 |
75個(gè)/管一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價(jià) | ||
24+ |
N/A |
51000 |
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
JS |
1822+ |
TO-220C |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
JS |
18+ |
TO-220C |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
JCS |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
Sino |
TO-220 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
華微 |
23+ |
TO220 |
78888 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
Sino |
23+ |
TO-220 |
6000 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
吉林華微 |
23+ |
TO-220C |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) |
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