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MGP15N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficien

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MS15N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSB15N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSF15N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

NGTB15N60EG

IGBT-Short-CircuitRated

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB15N60EG

IGBT-Short-CircuitRated

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PSM15N60CT

15A600VSingleN??hannelPowerMOSFET

PFC

PFC Device Inc.

RLBGB15N60

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLGB15N60CT

IGBT

Features ?600V,15A ?VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms ?SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS,

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLPGB15N60CT

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

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HUAWEI
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