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IXFC52N30P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC52N30P

PolarHTTMHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFH52N30P

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFH52N30P

PowerMOSFETs

IXYS

IXYS Corporation

IXFH52N30P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=73mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH52N30Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFK52N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFT52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFV52N30P

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFV52N30P

PowerMOSFETs

IXYS

IXYS Corporation

IXFV52N30PS

PowerMOSFETs

IXYS

IXYS Corporation

IXFV52N30PS

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTQ52N30P

PolarHTPowerMOSFET

Polar?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switch-ModeandResonant-ModePowerSuppli

IXYS

IXYS Corporation

IXTQ52N30P

N-ChannelEnhancementModePowerMOSFETs

IXYS

IXYS Corporation

IXTQ52N30P

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage-:VDSS=300V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=66mΩ(Max) ?FastSwitching ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switch-ModeandResonant-ModePowerS

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTT52N30P

N-ChannelEnhancementModePowerMOSFETs

IXYS

IXYS Corporation

IXTT52N30P

PolarHTPowerMOSFET

Polar?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switch-ModeandResonant-ModePowerSuppli

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-268
8866
詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
 詢價
IXYS
22+
TO268
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO268
13880
公司只售原裝,支持實單
 詢價
IXYS
23+
TO268
9000
原裝正品，支持實單
 詢價
IXYS
2022+
TO-268
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS
24+
TO-268-3 D?Pak(2 引線 + 接片
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IXYS
23+
TO-268
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS
17+
TO-268
1000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多IXGT52N30Q供應(yīng)商 更新時間2025-1-7 15:30:00

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