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IXGT16N170A

High Voltage IGBT

Features ?Highblockingvoltage ?Highcurrenthandlingcapability ?MOSGateturn-on-drivesimplicity ?RuggedNPTstructure ?MoldingepoxiesmeetUL94V-0flammabilityclassification ?SONIC-FRDTMfastrecoverycopackdiode ?InternationalstandardpackagesJEDECTO-268andJEDECTO-

IXYS

IXYS Corporation

IXGT16N170A

High Voltage IGBT

IXYS

IXYS Corporation

IXGT16N170A

High Voltage IGBT

IXYS

IXYS Corporation

IXGT16N170A

包裝：管件 封裝/外殼：TO-268-3，D3Pak（2 引線 + 接片），TO-268AA 類別：分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1700V 16A 190W TO268

IXYS

IXYS Corporation

IXGT16N170AH1

High Voltage IGBT

Features ?Highblockingvoltage ?Highcurrenthandlingcapability ?MOSGateturn-on-drivesimplicity ?RuggedNPTstructure ?MoldingepoxiesmeetUL94V-0flammabilityclassification ?SONIC-FRDTMfastrecoverycopackdiode ?InternationalstandardpackagesJEDECTO-268andJEDECTO-

IXYS

IXYS Corporation

IXGT16N170AH1

High Voltage IGBT

IXYS

IXYS Corporation

IXBA16N170AHV

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features ?HighVoltagePackage ?HighBlockingVoltage ?Anti-ParallelDiode ?LowConductionLosses Advantages ?LowGateDriveRequirement ?HighPowerDensity Applications: ?Switch-ModeandResonant-ModePowerSupplies ?UninterruptiblePowerSupplies(UPS) ?LaserGenerators ?Ca

IXYS

IXYS Corporation

IXBH16N170

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features ?HighBlockingVoltage ?JEDECTO-268surfaceandJEDECTO-247AD ?Lowconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Applications ?ACmotorspeedcontrol ?Uninter

IXYS

IXYS Corporation

IXBH16N170A

HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor

Features ?Monolithicfastreversediode ?HighBlockingVoltage ?JEDECTO-268surfacemountandJEDECTO-247ADpackages ?Lowswitchinglosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Appl

IXYS

IXYS Corporation

IXBT16N170

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features ?HighBlockingVoltage ?JEDECTO-268surfaceandJEDECTO-247AD ?Lowconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Applications ?ACmotorspeedcontrol ?Uninter

IXYS

IXYS Corporation

IXBT16N170A

HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor

Features ?Monolithicfastreversediode ?HighBlockingVoltage ?JEDECTO-268surfacemountandJEDECTO-247ADpackages ?Lowswitchinglosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Appl

IXYS

IXYS Corporation

IXBT16N170AHV

HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor

Features ?HighVoltagePackage ?HighBlockingVoltage ?Anti-ParallelDiode ?LowConductionLosses Advantages ?LowGateDriveRequirement ?HighPowerDensity Applications: ?Switch-ModeandResonant-ModePowerSupplies ?UninterruptiblePowerSupplies(UPS) ?LaserGenerators ?Ca

IXYS

IXYS Corporation

IXGH16N170

HighVoltageIGBT

HighVoltageIGBT Features ?Internationalstandardpackages JEDECTO-268andJEDECTO-247AD ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?RuggedNPTstructure ?MoldingepoxiesmeetUL94V-0flammabilityclassification Applications ?Capacitordischa

IXYS

IXYS Corporation

IXGH16N170A

HighVoltageIGBT

Features ?Highblockingvoltage ?Highcurrenthandlingcapability ?MOSGateturn-on-drivesimplicity ?RuggedNPTstructure ?MoldingepoxiesmeetUL94V-0flammabilityclassification ?SONIC-FRDTMfastrecoverycopackdiode ?InternationalstandardpackagesJEDECTO-268andJEDECTO-

IXYS

IXYS Corporation

IXGT16N170

HighVoltageIGBT

IXYS

IXYS Corporation

IXGT16N170

HighVoltageIGBT

HighVoltageIGBT Features ?Internationalstandardpackages JEDECTO-268andJEDECTO-247AD ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?RuggedNPTstructure ?MoldingepoxiesmeetUL94V-0flammabilityclassification Applications ?Capacitordischa

IXYS

IXYS Corporation

IXYH16N170C

HighVoltageXPTIGBT

IXYS

IXYS Corporation

產品屬性

  • 產品編號：

    IXGT16N170A

  • 制造商：

    IXYS

  • 類別：

    分立半導體產品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • IGBT 類型：

    NPT

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    5V @ 15V，11A

  • 開關能量：

    900μJ（關）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關）值：

    36ns/160ns

  • 測試條件：

    850V，16A，10 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-268-3，D3Pak（2 引線 + 接片），TO-268AA

  • 供應商器件封裝：

    TO-268AA

  • 描述：

    IGBT 1700V 16A 190W TO268

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-268-3,D3Pak(2 引線 + 接片
30000
晶體管-分立半導體產品-原裝正品
 詢價
IXYS
24+
TO-268
8866
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
24+
TO-268
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS/艾賽斯
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO268
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IXGT16N170A供應商 更新時間2025-1-1 14:14:00

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