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IXFT80N15Q

HiPerFET Power MOSFETs Q-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas

IXYS

IXYS Corporation

CEB80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP80N15

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEP80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEW80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,80A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FTK80N15P

150VN-ChannelMOSFETs

FS

First Silicon Co., Ltd

詳細(xì)參數(shù)

  • 型號：

    IXFT80N15Q

  • 功能描述：

    MOSFET 80 Amps 150V 0.0225 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實單
 詢價
IXYS
23+
TO2683 D3Pak (2 Leads + Tab) T
9000
原裝正品，支持實單
 詢價
IXYS
2022+
TO-268-3,D3Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
24+
TO-268
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
更多IXFT80N15Q供應(yīng)商 更新時間2025-2-19 9:01:00

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