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IXFB80N50Q2

HiPerFET Power MOSFETs Q-Class

IXYS

IXYS Corporation

IXFB80N50Q2_07

HiPerFET Power MOSFETs

IXYS

IXYS Corporation

IXFE80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?F

IXYS

IXYS Corporation

IXFK80N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK80N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFN80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductanc

IXYS

IXYS Corporation

IXFN80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductanc

IXYS

IXYS Corporation

IXFN80N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Fastintrinsicdiode ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?ULrecognized. ?Isolatedmountingbase Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFR80N50P

PolarHVHiPerFETPowerMOSFETISOPLUS247

IXYS

IXYS Corporation

IXFX80N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IXFB80N50Q

  • 制造商：

    IXYS

  • 制造商全稱：

    IXYS Corporation

  • 功能描述：

    HiPerFET Power MOSFETs

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS/艾賽斯
23+
PLUS264
9329
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IXYS/艾賽斯
24+
TO247
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
IXYS/艾賽斯
23+
TO264
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS/艾賽斯
2022
TO264
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
IXYS
20+
PLUS264
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IXYS
24+
SOP-16
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS
22+
TO2643 TO264AA
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IXFB80N50Q供應(yīng)商 更新時間2025-1-25 11:10:00

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