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ISH3N150

isc N-Channel MOSFET Transistor

·FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS:1500V(Min) ·StaticDrain-SourceOn-ResistanceRDS(on):

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA3N150HV

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTH3N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH3N150

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTJ3N150

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ3N150M

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ3N150M

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=178A@TC=25℃ ·DrainSourceVoltage -VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V ·AvalancheRated ·FastIntrinsicDiode APPLICATIONS ·EasytoMount ·SpaceSavings ·HighPowerDensity

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NCE3N150

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150D

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150F

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150PF

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE3N150T

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

STFV3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STFW3N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpower

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STFW3N150

N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP3N150

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP3N150

N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

供應(yīng)商型號品牌批號封裝庫存備注價格
Phoenix/菲尼克斯
23/24+
3002898
9572
優(yōu)勢特價 原裝正品 全產(chǎn)品線技術(shù)支持
 詢價
原廠原裝
ROHS
13352
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
DALE
9442
20
公司優(yōu)勢庫存 熱賣中!
 詢價
MEC
24+
原廠封裝
300
原裝現(xiàn)貨假一罰十
 詢價
13+
DIP
14648
原裝分銷
 詢價
VISHAY
2015+
10000
普通
 詢價
AMIS
24+
QFP
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價
AMIS
16+
TQFP
1232
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
AMIS
23+
TQFP80
1120
優(yōu)勢庫存
 詢價
AMIS
23+
BGAQFP
8659
原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢.
 詢價
更多ISH3N150供應(yīng)商 更新時間2025-1-17 15:00:00

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