首頁 >IRGSL4B60K>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRGSL4B60K | INSULATED GATE BIPOLAR TRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerfor | IRF International Rectifier | IRF | |
IRGSL4B60K | INSULATED GATE BIPOLAR TRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low | IRF International Rectifier | IRF | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerfor | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH | IRF International Rectifier | IRF | ||
Package:TO-262-3,長引線,I2Pak,TO-262AA;包裝:卷帶(TR) 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT NPT 600V 11A TO262 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerfor | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRGSL4B60K
- 制造商:
IRF
- 制造商全稱:
International Rectifier
- 功能描述:
INSULATED GATE BIPOLAR TRANSISTOR
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
2016+ |
TO-262 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
IR |
24+ |
TO-262 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
24+ |
TO-262 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IR |
23+ |
TO-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
22+ |
TO-262 |
8900 |
英瑞芯只做原裝正品!!! |
詢價 | ||
IR |
TO-262 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
03+ |
TO-262 |
470 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
22+ |
TO-262 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-262 |
2970 |
原廠原裝正品 |
詢價 |
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