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IRGSL4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGSL4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGSL4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH

IRF

International Rectifier

IRGSL4B60KD1PBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGSL4B60KD1PBF

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：卷帶（TR） 類別：分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述：IGBT NPT 600V 11A TO262

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGB4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITH

IRF

International Rectifier

IRGB4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGB4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGB4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGS4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITH

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRGSL4B60KD1

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    INSULATED GATE BIPOLAR TRANSISTOR WITH

供應商型號品牌批號封裝庫存備注價格
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
2016+
TO-262
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
23+
TO-262
8600
全新原裝現(xiàn)貨
 詢價
IR
24+
TO-262
8866
詢價
IR
24+
TO-262
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
22+
TO-262
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-262
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-262
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-262
7000
詢價
更多IRGSL4B60KD1供應商 更新時間2025-6-22 11:04:00

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