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IRGS10B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGS10B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRGS10B60KDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRGSL10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGSL10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

MBR10B60CTH

PowerSchottkyRectifier-10Amp60Volt

SIRECTSirectifier Global Corp.

矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司

MBR10B60FCTH

PowerSchottkyRectifier-10Amp60Volt

SIRECTSirectifier Global Corp.

矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司

SBL10B60CTH

PowerSchottkyRectifier-10Amp60Volt

SIRECTSirectifier Global Corp.

矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司

TCF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

TCF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

TCU10B60

FRD-ForPowerFactorImprovementHighFrequencyRectification

FEATURES *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

TSU10B60

FRED

NI

National Instruments Inc.

TSU10B60

FRD-ForPowerFactorImprovementHighFrequencyRectification

FEATURES *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IRGS10B60KDPBF

  • 功能描述：

    IGBT 晶體管 600V ULTRAFAST 10-30KHZ COPACK IGBT

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
19+
TO263
9000
詢價(jià)
IR
24+
TO263
8950
BOM配單專家,發(fā)貨快,價(jià)格低
 詢價(jià)
INFINEON/英飛凌
18+
TO-263
3500
進(jìn)口原裝假一賠十支持含稅
 詢價(jià)
INFINEON
17+
TO-263
12170
原裝庫(kù)存有訂單來談優(yōu)勢(shì)
 詢價(jià)
INFINEON/英飛凌
2021+
TO-263
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
INFINEON/英飛凌
24+
TO-263
159863
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
17+
TO-263
4170
原裝現(xiàn)貨
 詢價(jià)
INTERNATI
12+
1000
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨
 詢價(jià)
Infineon
18+
NA
3642
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
更多IRGS10B60KDPBF供應(yīng)商 更新時(shí)間2025-1-8 16:03:00

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