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IRGSL6B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGSL6B60KDPBF

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：卷帶（TR） 類別：分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述：IGBT NPT 600V 13A TO262

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGB6B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrent

IRF

International Rectifier

IRGB6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-220isavailableinPbFasaLead-Free Benefits ?BenchmarkEff

IRF

International Rectifier

IRGB6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGB6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGB6B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrentSharing

IRF

International Rectifier

IRGIB6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGIB6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGIB6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

產品屬性

  • 產品編號：

    IRGSL6B60KDPBF

  • 制造商：

    Infineon Technologies

  • 類別：

    分立半導體產品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    卷帶（TR）

  • IGBT 類型：

    NPT

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.2V @ 15V，5A

  • 開關能量：

    110μJ（開），135μJ（關）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關）值：

    25ns/215ns

  • 測試條件：

    400V，5A，100 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-262-3，長引線，I2Pak，TO-262AA

  • 供應商器件封裝：

    TO-262

  • 描述：

    IGBT NPT 600V 13A TO262

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-262-3
250
詢價
IR
23+
TO-262
7750
全新原裝優(yōu)勢
 詢價
Infineon
24+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
INFINEON
1809+
TO-262
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細信息,
 詢價
Infineon Technologies
22+
TO262
9000
原廠渠道,現(xiàn)貨配單
 詢價
Infineon Technologies
21+
TO262
13880
公司只售原裝,支持實單
 詢價
IR
23+
TO262
6000
原裝正品，支持實單
 詢價
更多IRGSL6B60KDPBF供應商 更新時間2025-4-10 16:30:00

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