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IRFS610A

Advenced Power MOSFET (N-CHANNEL)

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS610A

isc Silicon NPN Power Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?3.3A,200V,RDS(on)=1.5?@VGS=10V ?Lowgatecharge(typical7.2nC) ?LowCrss(typical6.8pF) ?Fastswitch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL610

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLI610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLI610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLS610A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFS610A

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    Advenced Power MOSFET(N-CHANNEL)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
17+
TO-220F
31518
原裝正品 可含稅交易
 詢價(jià)
FAIRCHILD/仙童
24+
TO 220F
154975
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAIRCHILD/仙童
23+
TO-220F
43000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
仙童
06+
TO-220F
3000
原裝庫(kù)存
 詢價(jià)
FAIRCHILD
24+
TO-220F
18000
詢價(jià)
FAIRCHILD/仙童
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FAIRCHILD/仙童
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FAIRCHILD/仙童
21+
TO-220F
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
FAIRCHILD/仙童
2022
TO-220F
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
更多IRFS610A供應(yīng)商 更新時(shí)間2025-3-12 14:00:00

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