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IRFR234B中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書

IRFR234B
廠商型號

IRFR234B

功能描述

250V N-Channel MOSFET

文件大小

640.93 Kbytes

頁面數(shù)量

9

生產廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導體

中文名稱

飛兆/仙童半導體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-16 16:35:00

IRFR234B規(guī)格書詳情

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.

Features

? 6.6A, 250V, RDS(on) = 0.45? @VGS = 10 V

? Low gate charge ( typical 29 nC)

? Low Crss ( typical 20 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

產品屬性

  • 型號:

    IRFR234B

  • 功能描述:

    MOSFET 250V N-Channel B-FET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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