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IRFR230中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR230
廠商型號(hào)

IRFR230

功能描述

AUTOMOTIVE GRADE

文件大小

4.66549 Mbytes

頁面數(shù)量

11

生產(chǎn)廠商 Kersemi Electronic Co., Ltd.
企業(yè)簡(jiǎn)稱

KERSEMI

中文名稱

Kersemi Electronic Co., Ltd.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2024-11-18 14:18:00

IRFR230規(guī)格書詳情

Description

Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest

processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive ava lanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free, RoHS Compliant

● Automotive Qualified *

產(chǎn)品屬性

  • 型號(hào):

    IRFR230

  • 功能描述:

    MOSFET 75V 1 N-CH HEXFET 16mOhms 50nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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