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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFR224TRRPBF	文件：368.2 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU224	文件：175.21 Kbytes Page：6 Pages	PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=3.8A)	IRF International Rectifier	IRF
IRFU224	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU224	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU224	文件：340.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFU224	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU224	文件：368.21 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR224,SiHFR224) ?Straightlead(IRFU224,SiHFU224) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU224A	文件：345.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFU224B	文件：670.03 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFU224PBF	文件：511.42 Kbytes Page：10 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFU224PBF	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU224PBF	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU224PBF	文件：4.12218 Mbytes Page：10 Pages	Dynamicdv/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU224PBF	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU224PBF	文件：368.2 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRXXH224	文件：119.62 Kbytes Page：6 Pages	POWIRLIGHTTMREFERENCEDESIGN:COMPACTBALLAST	IRF International Rectifier	IRF
IRXXHD224	文件：119.62 Kbytes Page：6 Pages	POWIRLIGHTTMREFERENCEDESIGN:COMPACTBALLAST	IRF International Rectifier	IRF
ISCN224N	文件：275.7 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistors DESCRIPTION ?LowCollectorSaturationVoltage :VCE(sat)=0.3V(Max)@IC=8A ?GoodLinearityofhFE ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Designedforrelaydrivers,high-speedinverters, converters,andothergeneralh	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
ISLA224P	文件：1.29398 Mbytes Page：34 Pages	Dual14-Bit,250MSPS/200MSPS/130MSPSADC	Intersil Intersil Corporation	Intersil
ISLA224P	文件：1.62633 Mbytes Page：34 Pages	Dual14-Bit,250MSPS/200MSPS/130MSPSADC	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
現(xiàn)代芯城（深圳）科技有限公司	IRFR224TRR-VB		24+	N/A	73000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢(xún)價(jià)
IRFR225B	FSC	23+24	TO-252	59630	主營(yíng)原裝MOS,二三級(jí)管,肖特基,功率場(chǎng)效應(yīng)管	詢(xún)價(jià)
深圳市星佑電子有限公司	IRFR22ATF	SAMSUNG	05+	原廠原裝	5856	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢(xún)價(jià)
瀚佳科技(深圳)有限公司	IRFR22ATF	SAMSUNG	24+		35200	一級(jí)代理/放心采購(gòu)	詢(xún)價(jià)
深圳龐田科技有限公司	IRFR22ATF	SAMSUNG	2023+環(huán)保現(xiàn)貨	標(biāo)準(zhǔn)封裝	2500	專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)等方案配套一站式服務(wù)	詢(xún)價(jià)
深圳市昌和盛利電子有限公司	IRFR230	IR	23+	TO-252	35890		詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	IRFR230	IR	TO-252	22+	6000	十年配單,只做原裝	詢(xún)價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRFR230	IR	23+	TO-252	6000	原裝正品，支持實(shí)單	詢(xún)價(jià)
深圳市創(chuàng)新跡電子有限公司	IRFR230	IR	22+	TO-252	25000	只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單	詢(xún)價(jià)
深圳市安富世紀(jì)電子有限公司	IRFR230	IR	23+	TO-252	8000	只做原裝現(xiàn)貨	詢(xún)價(jià)

更多IRFR224TRR供應(yīng)商更新時(shí)間2025-1-8 11:06:00

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