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首頁 >IRFR/U2405>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR/U2405	文件：1.61391 Mbytes Page：8 Pages	Surface Mount (IRFR2405) Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Surf	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR2405	文件：129.36 Kbytes Page：10 Pages	PowerMOSFET(Vdss=55V,Rds(on)=0.016ohm,Id=56A?? Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRFR2405	文件：334.89 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR2405	文件：1.61391 Mbytes Page：8 Pages	SurfaceMount(IRFR2405) Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Surf	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR2405LPBF	文件：226.77 Kbytes Page：11 Pages	SurfaceMount(IRFR2405)	IRF International Rectifier	IRF
IRFR2405PBF	文件：217.62 Kbytes Page：10 Pages	HEXFETPowerMOSFET Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRFR2405PBF	文件：226.77 Kbytes Page：11 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRFR2405PBF	文件：3.83412 Mbytes Page：10 Pages	AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR2405PBF	文件：226.77 Kbytes Page：11 Pages	AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRFR2405PBF	文件：3.82933 Mbytes Page：10 Pages	SurfaceMount(IRFR2405)StraightLead(IRFU2405)AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR2405PbF	文件：226.77 Kbytes Page：11 Pages	SurfaceMount(IRFR2405)	IRF International Rectifier	IRF
IRFR2405TR	文件：460.34 Kbytes Page：7 Pages	55VN-ChannelMOSFET Description AdvancedProcessTechnology Dynamicdv/dtRating FastSwitching FullyAvalancheRated Lead-Free VDS(V)=55V ID=34A(VGS=10V) RDS(ON)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡稱UMW?)	UMW
IRFR2405TRPBF	文件：226.77 Kbytes Page：11 Pages	AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRFR2405TRPBF	文件：1.09103 Mbytes Page：4 Pages	N-channelEnhancementModePowerMOSFET Features ?VDS=60V,ID=50A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
IRFU2405	文件：129.36 Kbytes Page：10 Pages	PowerMOSFET(Vdss=55V,Rds(on)=0.016ohm,Id=56A?? Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRFU2405	文件：901.79 Kbytes Page：10 Pages	SurfaceMount(IRFR2405)	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU2405	文件：247.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFU2405PBF	文件：217.62 Kbytes Page：10 Pages	HEXFETPowerMOSFET Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRFU2405PbF	文件：226.77 Kbytes Page：11 Pages	SurfaceMount(IRFR2405)	IRF International Rectifier	IRF
IRFU2405PBF	文件：226.77 Kbytes Page：11 Pages	AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	IRF International Rectifier	IRF

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRFR/U2407	IR	22+		6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IRFR/U2407	IR	23+		8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFR/U2407	IR	23+		8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRFR/U2407	IR	23+		7000		詢價(jià)
深圳市昌和盛利電子有限公司	IRFR/U310	IR	23+	TO-251/TO-25	9896		詢價(jià)

更多IRFR/U2405供應(yīng)商更新時(shí)間2024-11-18 10:01:00

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