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首頁 >IRFR/U220A>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR/U220A	文件：258.54 Kbytes Page：7 Pages	Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR220	文件：55.93 Kbytes Page：7 Pages	4.6A,200V,0.800Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
IRFR220	文件：1.44698 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR220	文件：3.96242 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR220	文件：332.51 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR220	文件：1.42322 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
IRFR220	文件：816.14 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR220,SiHFR220) ?Straightlead(IRFU220,SiHFU220) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR220A	文件：258.54 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR220A	文件：321.37 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR220B	文件：665.75 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR220B	文件：596.55 Kbytes Page：10 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-Channelenhancementmodepowerfieldeffect transistorsareproducedusingONSemiconductor’s proprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitching performance,andw	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
IRFR220BTM	文件：1.43474 Mbytes Page：5 Pages	N-channelEnhancementModePowerMOSFET Features ?VDS=200V,ID=30A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
IRFR220N	文件：132.73 Kbytes Page：10 Pages	PowerMOSFET(Vdss=200V,Rds(on)max=600mohm,Id=5.0A) Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent TypicalSMPSTopologies ●T	IRF International Rectifier	IRF
IRFR220N	文件：335.72 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR220N	文件：3.73907 Mbytes Page：10 Pages	SMPSMOSFET Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR220N	文件：1.03454 Mbytes Page：3 Pages	N-ChannelMOSFET200V,6.0A,0.65 Application Load/PowerSWwitching InterfacingSwitching BatteryManagementforUltraSmallPortable Electronics LogicLevelShift	TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司	TECHPUBLIC
IRFR220NPBF	文件：220.96 Kbytes Page：10 Pages	HEXFETPowerMOSFET Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGatetoDrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent	IRF International Rectifier	IRF
IRFR220NPBF	文件：3.83872 Mbytes Page：10 Pages	SMPSMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR220NPBF	文件：230.1 Kbytes Page：11 Pages	HighfrequencyDC-DCconverters	IRF International Rectifier	IRF
IRFR220NPBF	文件：230.1 Kbytes Page：11 Pages	HighfrequencyDC-DCconverters	IRF International Rectifier	IRF

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市永貝爾科技有限公司	IRFR/U220A	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市鼎欣微電子有限公司	IRFR/U220A	IR	21+	TO-252	30000	只做正品原裝現(xiàn)貨	詢價
深圳市河鋒鑫科技有限公司	IRFR/U2407	IR	22+		6000	終端可免費供樣,支持BOM配單	詢價
深圳市創(chuàng)新跡電子有限公司	IRFR/U2407	IR	23+		8000	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀(jì)電子有限公司	IRFR/U2407	IR	23+		8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	IRFR/U2407	IR	23+		7000		詢價
深圳市昌和盛利電子有限公司	IRFR/U310	IR	23+	TO-251/TO-25	9896		詢價

更多IRFR/U220A供應(yīng)商更新時間2025-1-17 14:26:00

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