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IRFP246

15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFP246

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IT246

PulseTransformerwithSingleSecondaryWinding

SCHAFFNER

Schaffner International Ltd

JS-246

InteractiveCatalogReplacesCatalogPages

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

JS-246

InteractiveCatalogReplacesCatalogPages

HONEYWELL-ACCHoneywell Accelerometers

霍尼韋爾霍尼韋爾國(guó)際有限公司

JS-246

InteractiveCatalogReplacesCatalogPages

HONEYWELL-ACCHoneywell Accelerometers

霍尼韋爾霍尼韋爾國(guó)際有限公司

JS-246

InteractiveCatalogReplacesCatalogPages

HONEYWELL-ACCHoneywell Accelerometers

霍尼韋爾霍尼韋爾國(guó)際有限公司

JS-246

BasicSwitchesSubminiature

HONEYWELL-ACCHoneywell Accelerometers

霍尼韋爾霍尼韋爾國(guó)際有限公司

JS-246

InteractiveCatalogReplacesCatalogPages

HONEYWELL-ACCHoneywell Accelerometers

霍尼韋爾霍尼韋爾國(guó)際有限公司

K246

Smallswitching(60V,2A)

●Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive(4V). 5)Easilydesigneddrivecircuits. 6)Easytoparallel.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

K246

SiliconSpreadingResistanceTemperatureSensorinMiniatureLeadedPlasticPackage

Features ?TemperaturedependentResistorwithPositiveTemperatureCoefficient ?Miniatureplasticpackageforverysmallthermaltimeconstants ?Fastresponse ?Highreliabilityduetomultilayergoldcontacts ?n-conductingsiliconcrystal ?Polarityindependentduetosymmetricalconstr

SIEMENSSiemens Ltd

西門子德國(guó)西門子股份公司

K246

NCHANNELJUNCTIONTYPE(FORCONSTANTCURRENT,IMPEDANCECONVERTERANDDC-ACHIGHINPUTIMPEDANCEAMPLIFIERCIRCUITAPPLICATIONS)

ForConstantCurrent,ImpedanceConverterandDC-ACHighInputImpedanceAmplifierCircuitApplications Highbreakdownvoltage:VGDS=?50V Highinputimpedance:IGSS=?1nA(max)(VGS=?30V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K246

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK2461isN-ChannelMOSFieldEffectTransistordesignedforhighspeedswitchingapplications. FEATURES ?LowOn-Resistance RDS(on)1=80m?MAX.(@VGS=10V,ID=10A) RDS(on)2=0.1?MAX.(@VGS=4V,ID=10A) ?LowCissCiss=1400pFTYP. ?Built-inG-SGa

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

K246

N-channelMOS-FET

Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

K246

Ultrahigh-SpeedSwitchingApplications

Features ·LowONresistance. ·Ultrahigh-speedswitching. ·Enablessimplifiedfabrication,high-densitymounding,andminiaturizationinendproductsduetothesurfacemountablepackage.

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

KRC246M

EPITAXIALPLANARNPNTRANSISTOR(HIGHCURRENTSWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

HIGHCURRENTSWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES WithBuilt-inBiasResistors. SimplifyCircuitDesign. ReduceaQuantityofPartsandManufacturingProcess. HighOutputCurrent:800mA.

KECKEC CORPORATION

KEC株式會(huì)社

KRC246S

EPITAXIALPLANARNPNTRANSISTOR(HIGHCURRENTSWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

HIGHCURRENTSWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES WithBuilt-inBiasResistors. SimplifyCircuitDesign. ReduceaQuantityofPartsandManufacturingProcess. HighOutputCurrent:800mA.

KECKEC CORPORATION

KEC株式會(huì)社

L-246

CommonModeInductors

RHOMBUS-IND

Rhombus Industries Inc.

LM246

PROGRAMMABLEQUADBIPOLAROPERATIONALAMPLIFIERS

DESCRIPTION TheLM346consistsoffourindependent,highgain,internallycompensated,lowpowerprogrammableamplifiers.Twoexternalresistors(Rset)allowtheusertoprogramthegain-bandwithproduct,slewrate,supplycurrent,inputbiascurrent,inputoffsetcurrentandinputnoise.Forexa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

LM246

PROGRAMMABLEQUADBIPOLAROPERATIONALAMPLIFIERS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFP246

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-247-3
8866
詢價(jià)
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
 詢價(jià)
IR
23+
TO-247
3000
全新原裝
 詢價(jià)
HARRIS
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
IR
22+
TO-247
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-247
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+24
TO-343
59630
主營(yíng)原裝MOS,二三級(jí)管,肖特基,功率場(chǎng)效應(yīng)管
 詢價(jià)
HARRIS(哈利斯)
23+
TO247
6000
誠(chéng)信服務(wù)，絕對(duì)原裝原盤
 詢價(jià)
IR
23+
TO-247
7000
詢價(jià)
24+
N/A
74000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
更多IRFP246供應(yīng)商 更新時(shí)間2024-10-26 16:30:00

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