零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFP240B | 200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?PowerMOSFET .VDSS=200V,RDS(on)=0.18Ohm,ID=20A Lead-Free | IRF International Rectifier | IRF | ||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET(200V,0.18ohm,12.8A) FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowerRDS(ON):0.144Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細參數(shù)
- 型號:
IRFP240B
- 制造商:
Rochester Electronics LLC
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
仙童 |
05+ |
TO-247 |
3000 |
原裝進口 |
詢價 | ||
FAIRCHILD |
23+ |
TO-3P |
9526 |
詢價 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
24+ |
TO-3P |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
FAIRCHILD/仙童 |
23+ |
TO-3P |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
FAIRCHILD |
新 |
13 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
22+ |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
IR |
23+ |
7000 |
詢價 | ||||
IRFP240FI |
330 |
330 |
詢價 |
相關(guān)規(guī)格書
更多- IRFP240B_FP001
- IRFP240FI
- IRFP240PBF
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相關(guān)庫存
更多- IRFP240B_FP001_Q
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