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IRFL024NTRPBF

Advanced Process Technology

IRF

International Rectifier

IRFL024Z

HEXFETPowerMOSFET

VDSS=55V RDS(on)=57.5m? ID=5.1A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionop

IRF

International Rectifier

IRFL024ZPBF

HEXFETPowerMOSFET

VDSS=55V RDS(on)=57.5m? ID=5.1A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionop

IRF

International Rectifier

IRFL024ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFL024ZTRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR024

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignedwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni

IRF

International Rectifier

IRFR024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR024

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR024,SiHFR024) ?Straightlead(IRFU024,SiHFU024) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

N-ChannelEnhancementModeMOSFET

Description TheIRFR024NTusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=60VID=30A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRFR024A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=17A??

IRF

International Rectifier

IRFR024N

UltraLowOn-Resistance

Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR024N

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRFR024NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFL024NTRPBF

  • 功能描述：

    MOSFET MOSFT 55V 4A 75mOhm 12.2nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
1928+
SOT-223
27500
一級代理專營IR,原裝現(xiàn)貨,價格優(yōu)勢
 詢價
IR
23+
SOT-223
20540
保證進口原裝現(xiàn)貨假一賠十
 詢價
IR
2020+
SOT-223
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INFINEON/IR
1907+
NA
15000
20年老字號,原裝優(yōu)勢長期供貨
 詢價
Infineon Technologies
24+
SOT-223
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IR
SOT223
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
IR
22+
SOT-223
26550
原裝正品，實單請聯(lián)系
 詢價
INFINEON
22+
原封裝
81220
只做原裝進口貨
 詢價
IR
20+
SOT223
300000
原裝正品 可含稅交易
 詢價
INFINEON/英飛凌
2021+
SOT-223
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
更多IRFL024NTRPBF供應商 更新時間2025-1-14 15:00:00

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