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首頁>IRFH5110TR2PBF>芯片詳情
IRFH5110TR2PBF_IR/國際整流器_MOSFET MOSFT 100V Gen 10.7 11.68mOhm 56.2nC Qg安富世紀(jì)一部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
IRFH5110TR2PBF
- 功能描述:
MOSFET MOSFT 100V Gen 10.7 11.68mOhm 56.2nC Qg
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市安富世紀(jì)電子有限公司
- 商鋪:
- 聯(lián)系人:
謝云
- 手機:
19924902278
- 詢價:
- 電話:
0755-83204142
- 地址:
深圳市福田區(qū)華強北路1019號華強廣場A棟17e
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