首頁(yè) >IRFE9110SCV>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalso | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
100V,P-CHANNEL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
POWERMOSFETTHRU-HOLE(MO-036AB) | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-1.1A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolder | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?PowerMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-1.1A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesold | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
P-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-3.1A) DESCRIPTION ThirdGnerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtec | IRF International Rectifier | IRF | ||
3.1A,100V,1.200Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DynamicdV/dtRating | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
詳細(xì)參數(shù)
- 型號(hào):
IRFE9110SCV
- 制造商:
International Rectifier
- 功能描述:
TRANS MOSFET P-CH 100V 2.5A 18PIN LCC - Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
18-pin LCC |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢(xún)價(jià) | ||
IR |
23+ |
18-pin LCC |
8000 |
只做原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
23+ |
18-pin LCC |
7000 |
詢(xún)價(jià) | |||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢(xún)價(jià) | ||
IR |
18+ |
LCC |
200 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢(xún)價(jià) | ||
IR |
23+ |
LCC |
66800 |
原廠授權(quán)一級(jí)代理,專(zhuān)注汽車(chē)、醫(yī)療、工業(yè)、新能源! |
詢(xún)價(jià) | ||
24+ |
長(zhǎng)期備有現(xiàn)貨 |
500000 |
行業(yè)低價(jià),代理渠道 |
詢(xún)價(jià) | |||
CHINA |
22+ |
LCC-18 |
640 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢(xún)價(jià) | ||
INFINEON |
23+ |
C-LCC-18 |
14253 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢(xún)價(jià) | ||
IR |
QQ咨詢(xún) |
LCC |
72 |
全新原裝 研究所指定供貨商 |
詢(xún)價(jià) |
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