IRFD211中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書
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These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
? 0.6A and 0.45A, 150V and 200V
? rDS(ON) = 1.5? and 2.4Ω
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards
產(chǎn)品屬性
- 型號：
IRFD211
- 制造商：
HARRIS
- 制造商全稱：
HARRIS
- 功能描述：
0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
01+ |
DIP-4 |
14600 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
HARRIS(哈利斯) |
23+ |
HVMDIP4 |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價 | ||
IR |
2016+ |
DIP-4 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
HAR |
22+ |
DIP |
4500 |
全新原裝品牌專營 |
詢價 | ||
IR |
DIP-4 |
68500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
23+ |
HEXDIP |
19526 |
詢價 | |||
IR |
22+ |
DIP-4 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
DIP-4 |
13500 |
詢價 | |||
IR-VISHAY |
23+ |
DIP4 |
19296 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
MOT |
23+ |
65480 |
詢價 |
