| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
400V.N-CHANNELHEXFETMOSFETTECHNOLOGY POWERMOSFETTHRU-HOLE(TO-254AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=0.55ohm,Id=10A) RDS(on)0.55? ID10A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
11A,400V,0.550Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=11A) DESCRIPTION ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastS | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HEXFETPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?Fast | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMosfet FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowerRDS(ON):0.437?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
詳細(xì)參數(shù)
- 型號(hào)：
IRFC340R
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | |||
IR |
23+ |
7000 |
詢價(jià) | ||||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
INFINEON |
1503+ |
SMD |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
Infineon Technologies |
21+ |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | |||
Infineon Technologies |
23+ |
9000 |
原裝正品，支持實(shí)單 |
詢價(jià) | |||
IR |
23+ |
TO-220F |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) |
相關(guān)規(guī)格書
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- IRFC350R
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- IRFC38N60LB
- IRFC4127EB
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相關(guān)庫(kù)存
更多- IRFC350B
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- IRFC9140B
- IRFC9240
- IRFD010PBF
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- IRFD020
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- IRFD024_10
- IRFD110
- IRFD110R
- IRFD111
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- IRFD120
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- IRFD122
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- IRFD211
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- IRFD213
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- IRFD220
- IRFD220PBF
- IRFD224
- IRFD2Z0
- IRFD310PBF
