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IRF9620PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620PBF

HEXFET Power MOSFET

Description TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?Dynamicd

IRF

International Rectifier

IRF9620PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620PBF-BE3

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620S

PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.5A)

Description TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?SurfaceM

IRF

International Rectifier

IRF9620S

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD2PAK(T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620SPBF

HEXFETPowerMOSFET

Description TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?SurfaceM

IRF

International Rectifier

IRF9620SPbF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD2PAK(T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620SPBF

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620STRLPbF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD2PAK(T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620STRLPBFA

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9620G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9620G

PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.0A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI9620G

PowerMOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9620GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MAX9620

Single/DualSC70,Zero-Drift,High-Efficiency,1.5MHzOpAmpswithRRIO

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX9620AXK+

Single/DualSC70,Zero-Drift,High-Efficiency,1.5MHzOpAmpswithRRIO

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX9620AXK+

Single/DualSC70,Zero-Drift,High-Efficiency,1.5MHzOpAmpswithRRIO

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX9620AXK+

Single/DualSC70,Zero-Drift,High-Efficiency,1.5MHzOpAmpswithRRIO

MaximMaxim Integrated Products

美信美信半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF9620PBF

  • 功能描述：

    MOSFET P-Chan 200V 3.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
Vishay Siliconix
24+
TO-220AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
VISHAY
2020+
TO-220
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
VISHAY/威世
21+
TO-220
6000
原裝正品
 詢價
VISHAY
21+
TO-220-3
5850
原裝正品 有掛有貨
 詢價
VISHAY/威世
24+
TO-220
2862
只做原廠渠道 可追溯貨源
 詢價
VISHAY
21+
5850
TO-220-3
 詢價
VISHAY
18+
TO-220
3372
原裝庫存有訂單來談優(yōu)勢
 詢價
VISHAY
23+
TO-220-3
550
原裝現(xiàn)貨支持送檢
 詢價
VISHAY/威世
2021+
TO-220
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
更多IRF9620PBF供應(yīng)商 更新時間2024-12-29 11:04:00

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