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IRF9540

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRF9540

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9540

19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF9540

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablility

SamsungSamsung semiconductor

三星三星半導體

IRF9540

P-CHANNEL POWER MOSFETS

Description TheIRF9540,IRF9541,IRF9542,IRF9543,RF1S9540,andRF1S9540SMareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttran

HARRIS

Harris Corporation

IRF9540

TO-220-3L Plas ti c-E n c a p s u late MOSFETS

FEATURES ·DrainCurrent–ID=-19A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF9540

P-Channel MOSFET

Description： ThisP-ChannelMOSFETusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications Features： 1)VDS=-100V,ID=-20A,RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRF9540

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-19A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9540

Power MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9540

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF9540

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9540

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF9540

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF9540N

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9540N

Advanced Process Technology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9540NL

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9540NL

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9540NLPBF

HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )

Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces

IRF

International Rectifier

IRF9540NPBF

HEXFET? Power MOSFET

IRF

International Rectifier

IRF9540NPBF

Advanced Process Technology

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數

  • 型號：

    IRF9540

  • 功能描述：

    MOSFET -100V Single P-Channel HEXFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
2015+
500
公司現貨庫存
 詢價
IR
23+
362
只做原裝全系列供應價格優(yōu)勢
 詢價
FAIRCHILD
23+
TO-220
65400
詢價
FSC
2020+
TO-220
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
FAIRCHILD/仙童
21+
TO-220
6000
原裝正品
 詢價
IR
21+
ZIP
8080
原裝現貨實單必成 只做原裝！
 詢價
IR(國際整流器)
2023+
N/A
4550
全新原裝正品
 詢價
IR
24+
TO 220
161405
明嘉萊只做原裝正品現貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現貨價秒殺全網
 詢價
Slkor/薩科微
24+
TO-220
50000
Slkor/薩科微一級代理,價格優(yōu)勢
 詢價
更多IRF9540供應商 更新時間2024-12-29 16:00:00

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