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IRF9530NPBF

HEXFET? Power MOSFET

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NPBF

P-Channel 100 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSwitch ?LoadSwitchinHighCurrentApplications ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF9530NPBF

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF9530NPBF_15

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF9530NS

iscP-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤200m?(@VGS=-10V;ID=-8.4A) ?Advancedtrenchprocesstechnology ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Fastswitchingapplication.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9530NS

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowintern

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9530NS

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

AdvancedProcessTechnologySurfaceMount

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF9530NSPBF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF9530NSTRLPbF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF9530NSTRLPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSTRR

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSTRRPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530PBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9530PBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF9530PBF

P-Channel100V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSwitch ?LoadSwitchinHighCurrentApplications ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF9530PBF

iscP-ChannelMOSFETTransistor

?DESCRIPTION ?Powermanagementinnotebookcomputer ?Portableequipmentandbatterypoweredsystems ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9530PBF

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF9530NPBF

  • 功能描述：

    MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
13+
TO-220
10000
深圳市勤思達(dá)科技有限公司主營IR系列全新原裝正品,公司現(xiàn)貨供應(yīng)IRF9530NPBF,IRF9530NSTR絕對正品現(xiàn)貨供應(yīng),歡迎咨詢洽談。
 詢價
IR
21+
TO220AB
500000
全新原裝 鄙視假貨15118075546
 詢價
IR
2020+
TO-220AB
9880
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
23+
TO-220
65240
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢價
IR
24+
TO-220
20000
進(jìn)口原裝現(xiàn)貨
 詢價
INFINEON
21+
SMD
16230
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!
 詢價
INFINEON/IR
1907+
NA
5550
20年老字號,原裝優(yōu)勢長期供貨
 詢價
IR
24+
N/A
15000
全新原裝的現(xiàn)貨
 詢價
IR
15+
原廠原裝
43900
進(jìn)口原裝現(xiàn)貨假一賠十
 詢價
23+
TO-220
78500
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
更多IRF9530NPBF供應(yīng)商 更新時間2024-12-29 11:04:00

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