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IRF9520NS

AdvancedProcessTechnology

IRF

International Rectifier

IRF9520NS

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9520NS

PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.8A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9520NSPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9520NSPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF9520NSTRL

AdvancedProcessTechnology

IRF

International Rectifier

IRF9520NSTRLPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF9520PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9520PBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRaging ?RepetitiveAvalancheRated ?P-Channel ?175°COperatingTemperature ?Fas

IRF

International Rectifier

IRF9520S

SurfaceMount

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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