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IRF830

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導體

IRF830

POWER MOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

IRF830

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconv

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

IRF830

High current, high speed switching

Description TheIRF830isanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETsandisobtainedthroughanextremeoptimizationlayoutdesign,inadditionaltopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapability,providesuper

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

IRF830

N-channel mosfet transistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=500V;RDS(ON)≤1.5Ω;ID=4.5A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF830

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

VDSS=500Volts RDS(on)=1.5Ohms ID=4.0Amperes Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplications suchaspowersupplies,PWM

DCCOM

Dc Components

IRF830

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF830

Power Field Effect Transistor

TMOSPOWERFET4.5AMPERES500VOLTSRDS(on)=1.5? ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn–Loss

ONSEMION Semiconductor

安森美半導體安森美半導體公司

IRF830

Drives 1 x 70W HID lamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRF

International Rectifier

IRF830

PowerMOS transistor Avalanche energy rated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES ?Repe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF830

N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=1.35? ■EXTREMELYHIGHdv/dtCAPABILITY ■1

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF830

N-CHANNEL ENHANCEMENT MODE

PowerFieldEffectTransistor N?ChannelEnhancementMode ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn?Losses,SpecifiedatElevated Temperature ?Rugged—SOAisPowerDissipationLimited ?Source?to?DrainDiodeCharacterizedforUsewithInductiveLoads

TRSYS

Transys Electronics

IRF830

N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF830

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF830

4.5A 500V N CHANNEL POWER MOSFET

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.cconverters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF830issuppliedin

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF830

Power MOSFET

DESCRIPTION TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. FEATURES ?Dynamic

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinoff-lineswitchedmodepower supplies,T.V.andcomputermonitorpowersupplies. DC-DCconverters,motorcontrolcircuitsandgeneralpurpose switchingapplications CompliancetoRoHS.

COMSET

Comset Semiconductor

IRF830

4.4A, 500V, 1.5廓 N-CHANNEL POWER MOSFET

DESCRIPTION ?IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

IRF830

N-Channel Power MOSFET

DESCRIPTION TheNellIRF830areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF830

N-Channel PowerMESH MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYTMprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvaroussources. ●TypicalRDS(on)=1.35? ●EXTREMELYHIGHdv/dtCAPABILITY ●100AVALAN

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

詳細參數(shù)

  • 型號：

    IRF830

  • 功能描述：

    MOSFET N-Chan 500V 4.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ST
11+
TO-220
62000
原裝正品現(xiàn)貨優(yōu)勢18
 詢價
FSC/仙童
24+
TO-220
7512
絕對原裝現(xiàn)貨,價格低,歡迎詢購!
 詢價
VISHAY
23+
TO-220
2800
原廠原裝正品
 詢價
IR
18+
MODULE
1290
主打模塊,大量現(xiàn)貨供應商QQ2355605126
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
06+
TO-220
7000
全新原裝 絕對有貨
 詢價
INTERSIL
121
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IR
23+
TO-220
18689
詢價
STM
16+
原廠封裝
232765
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-220
9960
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
更多IRF830供應商 更新時間2024-12-27 13:38:00

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