首頁>IRF6623TR1PBF>規(guī)格書詳情
IRF6623TR1PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6623TR1PBF規(guī)格書詳情
Description
The IRF6623PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHS Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號:
IRF6623TR1PBF
- 功能描述:
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
694 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
23+ |
DIRECTFET ST |
20000 |
全新原裝假一賠十 |
詢價 | ||
IR |
23+ |
PLL |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價 | ||
IR |
21+ |
PLL |
35200 |
全新原裝現(xiàn)貨/假一罰百! |
詢價 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric ST |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
24+ |
PLL |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
07+ |
QFN |
694 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IOR |
23+ |
DIRECTFE |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IOR |
24+ |
QFN |
369 |
詢價 | |||
Infineon(英飛凌) |
23+ |
N/A |
589610 |
新到現(xiàn)貨 原廠一手貨源 價格秒殺代理! |
詢價 |