IRF6623中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRF6623規(guī)格書詳情
Description
The IRF6623 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? Low Switching Losses
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with Existing Surface Mount Techniques
產(chǎn)品屬性
- 型號(hào)：
IRF6623
- 功能描述：
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3269 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
MG-WDSON-5 |
6000 |
原裝現(xiàn)貨正品 |
詢價(jià) | ||
IR |
23+ |
PLL |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | ||
只做原裝 |
21+ |
QFN |
36520 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
Infineon Technologies |
22+ |
DirectFET? Isometric ST |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IOR |
2016+ |
QFN |
6523 |
只做原裝正品現(xiàn)貨!或訂貨! |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
MG-WDSON-5 |
25000 |
原裝正品,假一賠十! |
詢價(jià) | ||
IR |
23+ |
PLL |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價(jià) | ||
IOR |
603 |
QFN |
4800 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
IR |
22+ |
QFN |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) |
